to-264 max 050-7148 rev c 6-2004 g d s super junction mosfet c power semiconductors o o l mos ? ultra low r ds ( on ) ? low miller capacitance ? ultra low gate charge, q g ? avalanche energy rated ? to-264 max package APT94N60L2C3 600v 94a 0.035 ? ? ? ? ? "coolmos ? comprise a new family of transistors developed by infineon technologies ag. "coolmos" is a trade- mark of infineon technologies ag" maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 500a) drain-source on-state resistance 2 (v gs = 10v, 60a) zero gate voltage drain current (v ds = 600v, v gs = 0v) zero gate voltage drain current (v ds = 600v, v gs = 0v, t j = 150c) gate-source leakage current (v gs = 20v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 5.4ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l dv / dt i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. drain-source voltage slope (v ds = 480v, i d = 94a, t j = 125c) repetitive avalanche current 7 repetitive avalanche energy 7 single pulse avalanche energy 4 unit volts amps volts watts w/c c v/ns amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms a na volts min typ max 600 0.03 0.035 1.0 50 500 200 2.10 3 3.9 APT94N60L2C3 600 94 282 20 30 833 6.67 -55 to 150 300 50 20 1 1800
dynamic characteristics APT94N60L2C3 050-7148 rev c 6-2004 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0.5 0.1 0.3 0.7 0.9 0.05 unit amps volts ns c v/ns min typ max 94 282 1 1.2 861 46 6 symbol r jc r ja min typ max 0.15 62 unit c/w characteristic junction to case junction to ambient symbol i s i sm v sd t rr q rr dv / dt symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energy turn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 300v i d = 94a @ 25c resistive switching v gs = 13v v dd = 380v i d = 94a @ 125c r g = 0.9 ? inductive switching @ 25c v dd = 400v, v gs = 15v i d = 94a, r g = 5 ? inductive switching @ 125c v dd = 400v v gs = 15v i d = 94a, r g = 5 ? min typ max 13600 4400 290 505 640 48 240 18 27 110 165 812 2040 3515 2920 3970 unit pf nc ns j source-drain diode ratings and characteristics thermal characteristics 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 36.0mh, r g = 25 ? , peak i l = 10a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 94a di / dt 700a/s v r v dss t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. 7 repetitve avalanche causes additional power losses that can be calculated as p av =e ar *f apt reserves the right to change, without notice, the specifications and information contained herein. characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = - 94a ) reverse recovery time (i s = - 94a , dl s /dt = 100a/s, v r = 350v) reverse recovery charge (i s = - 94a , dl s /dt = 100a/s, v r = 350v) peak diode recovery dv / dt 5
050-7148 rev c 6-2004 typical performance curves APT94N60L2C3 r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 4.5v 5v 5.5v 4v v gs =15 &10v v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature 6v & 6.5v 0 5 10 15 20 0123456 020406080100120140160180 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 normalized to v gs = 10v @ 47a 200 180 160 140 120 100 80 60 40 20 0 100 80 60 40 20 0 3 2.5 2.0 1.5 1.0 0.5 0 200 180 160 140 120 100 80 60 40 20 0 1.40 1.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.2 1.1 1.0 0.9 0.8 0.7 0.6 i d = 47a v gs = 10v 0.0618 0.0885 0.0230f 0.436f power (watts) rc model junction temp. ( c) case temperature. ( c)
050-7148 rev c 6-2004 APT94N60L2C3 typical performance curves c rss c iss c oss v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 600 0 10 20 30 40 50 0 100 200 300 400 500 600 700 800 0.3 0.5 0.7 0.9 1.1 1.3 1.5 282 100 50 10 5 1 16 12 8 4 0 t c =+25c t j =+150c single pulse 10ms 1ms 100s t j =+150c t j =+25c v ds = 300v v ds = 120v v ds = 480v i d = 94a 60,000 10,000 1,000 100 10 200 100 10 1 operation here limited by r ds (on) i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 400v r g = 5 ? t j = 125c l = 100h e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) 10 30 50 70 90 110 130 150 10 30 50 70 90 110 130 150 10 30 50 70 90 110 130 150 0 5 10 15 20 25 30 35 40 45 50 v dd = 400v i d = 94a t j = 125c l = 100h e on includes diode reverse recovery. t d(on) t d(off) e on e off 600 500 400 300 200 100 0 8000 7000 6000 5000 4000 3000 2000 1000 0 v dd = 400v r g = 5 ? t j = 125c l = 100h v dd = 400v r g = 5 ? t j = 125c l = 100h e on includes diode reverse recovery. 250 200 150 100 50 0 16000 14000 12000 10000 8000 6000 4000 2000 0
050-7148 rev c 6-2004 typical performance curves APT94N60L2C3 apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved. figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) bsc 2-plcs. to-264 max tm (l2) package outline 10% t d(on) 10% t r 90% 5% t collector current collector voltage gate voltage t j = 125 c switching energy 5 % t t j = 125 c collector voltage collector current gate voltage 90% 90% t f t d(off) 10% switching energy 0 i c d.u.t. apt30df60 v ce figure 20, inductive switching test circuit v dd g
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